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机译:飞秒激光硫超掺杂硅上的电子背散射衍射
Fraunhofer Heinrich Hertz Institute (HHI), Am Stollen 19B, D-38640 Goslar, Germany Energie-Forschungszentrum Niedersachsen, Am Stollen 19B, D-38640 Goslar,Germany;
Institute of Photonic Technology, Albert Einstein Strasse 9, D-07745 Jena, Germany;
Institute of Photonic Technology, Albert Einstein Strasse 9, D-07745 Jena, Germany;
Fraunhofer Heinrich Hertz Institute (HHI), Am Stollen 19B, D-38640 Goslar, Germany;
Fraunhofer Heinrich Hertz Institute (HHI), Am Stollen 19B, D-38640 Goslar, Germany;
机译:飞秒激光硫超掺杂硅的微观电子和结构分析
机译:飞秒激光诱导的硫掺杂硅N + / P光电二极管的光电性能
机译:飞秒激光诱导的硫掺杂硅N + / P光电二极管的光电性能
机译:超越硫的高掺杂硅:金属掺杂剂的结构和电子特性
机译:飞秒激光织构和超掺杂硅的制造技术。
机译:飞秒激光诱导的硫掺杂硅N + / P光电二极管的光电性能
机译:飞秒激光硫超掺杂硅上的电子背散射衍射