Tunable aluminium-gated single electron transistor on a doped silicon-on-insulator etched nanowire

摘要

We report the fabrication and electrical characterization of an electrostatically defined aluminum-gated SET on a lightly doped SOI etched nanowire based on MOSFET structures. The tunability of the device is achieved via two sets of electrically isolated aluminum surface gates. The results demonstrate a reproducible constant charging energy of 2meV for a large range of gate voltages as well as tunable tunneling resistance. The controllable tunnel barriers permit transport spectroscopy of subthreshhold features.