Response to 'Comment on 'Mechanism of non-metal catalytic growth of graphene on silicon'' [Appl. Phys. Lett. 101,096101 (2012)]

摘要

In our letter, we reported the non-metal catalytic growth of graphene on silicon (Si) and proposed the growth mechanism as a process consisting of surface reaction, adsorption, decomposition, and accumulation of methane precursor. The main points in the comment2 raised by Yan and Sun are that: (1) our proposed mechanism should not exclude the absence of SiC at the temperature below 1000 ℃; (2) carbide formation is not a negative factor for graphene growth, as supported by Ref. 3; and (3) one cannot rule out the possibilities of graphene formed by airborne flakes, as reported in their own work.