...
机译:MgO保护层覆盖的银纳米线中的自旋弛豫机理
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581, Japan,Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan;
Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan,Frontier Research Academy for Young Researchers, Kyushu Institute of Technology, 680-4 Kawazu,lizuka 820-8502, Japan;
Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan,Department of Material Physics and Chemistry, University of Science and Technology Beijing,Beijing 100083, People's Republic of China;
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa 277-8581, Japan,Advanced Science Institute, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan,Department of Material Physics and Chemistry, University of Science and Technology Beijing,Beijing 100083, People's Republic of China;
机译:具有高密度纳米线和超薄MgO层的n-ZnO纳米线/ i-MgO / n-Si结构中的戏剧性增强的紫外线光敏机制
机译:(001)MgO基体上铁电BaTiO_3 / SrTiO_3多层膜的界面结构和应变松弛机制
机译:覆盖有各种氧化物的Ag纳米线的自旋弛豫特性
机译:多层健壮电信网络的设计:使用拉格朗日松弛法的保护机制的成本分析
机译:单层和少层石墨烯自旋阀的制造和表征导致自旋弛豫长度以及自旋电压对载流子浓度的依赖性得到优化。
机译:低速旋涂银纳米线作为透明导电层的AlGaInP LED
机译:银纳米线的旋转松弛机制覆盖着MgO保护层
机译:短自旋弛豫时间的实验测量:mgO中Fe(+)的高温弛豫过程