机译:自旋弛豫速率对铁磁体/氧化物/半导体触点中界面自旋去极化的影响
Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, South Korea;
Korea Institute of Science and Technology (KIST), Seoul 136-791, South Korea;
Korea Institute of Science and Technology (KIST), Seoul 136-791, South Korea;
Korea Basic Science Institute (KBSI), Daejeon 305-764, South Korea;
Korea Basic Science Institute (KBSI), Daejeon 305-764, South Korea;
Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, South Korea;
Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, South Korea,Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 711-873, South Korea;
机译:自旋弛豫速率对铁磁体/氧化物/半导体触点中界面自旋去极化的影响
机译:退化肖特基与铁磁体接触附近的简并半导体中的自旋积累:自旋注入和萃取
机译:具有铁磁MnAs源极和漏极触点的自旋金属氧化物半导体场效应晶体管的磁阻
机译:基于Si的旋转金属氧化物 - 半导体场效应晶体管中的旋转传输:旋转漂移效果在反转通道中,N〜+ -SI源/漏区中的旋转弛豫
机译:用于纺纱应用的氧化物铁磁性半导体的外延生长及表征
机译:铁磁半导体与硅直接自旋接触的突变界面原子尺度工程
机译:自旋弛豫速率对体外界面自旋去极化的影响 铁磁/氧化/半导体触点