机译:InGaAs中的激子和载流子自旋弛豫与晶格切割的Ge衬底晶格匹配
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan;
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan;
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan;
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Szhou Industrial Park, Suzhou, China;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Ruoshui Road 398, Szhou Industrial Park, Suzhou, China;
Department of Applied Physics, Waseda University, Shinjuku, Tokyo 169-8555, Japan;
机译:InGaAs / InP量子阱中的激子自旋弛豫动力学
机译:GAAS基质上生长的自组织INAS多层中局部激子的运子弛豫和热活化
机译:InGaAs / GaAs饱和吸收体结构中载流子和自旋弛豫的全光学分析
机译:ZnxCd1-xSe / ZnSe多量子阱中激子-Zeeman分裂和载流子自旋弛豫的光偏振测量
机译:单层和少层石墨烯自旋阀的制造和表征导致自旋弛豫长度以及自旋电压对载流子浓度的依赖性得到优化。
机译:具有短程自旋相关性的Mott绝缘子中超快的载流子弛豫
机译:在紧张的Ingaas / GaAs量子井中的激子旋转松弛