机译:使用Co-InGaAs合金的具有自对准金属源极/漏极的In_(0.53)Ga_(0.47)As金属氧化物半导体场效应晶体管
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba,Ibaraki 305-8568, Japan;
Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo,Bunkyo-ku, Tokyo 113-8656, Japan;
机译:使用分子束外延-Al_2O_3 / Ga_2O_3(Gd_2O_3)作为栅极电介质的自对准反型沟道In_(0.53)Ga_(0.47)As金属氧化物半导体场效应晶体管的dc和rf特性
机译:具有浅金属源极和漏极扩展以及偏置N〜+掺杂区以抑制泄漏的ln_(0.53)Ga_(0.47)As N沟道金属氧化物半导体场效应晶体管
机译:具有超低源极/漏极电阻的无注入In_(0.53)Ga_(0.47)As量子阱金属绝缘体半导体场效应晶体管的实验演示
机译:反转式表面通道IN_(0.53)GA_(0.47)作为金属氧化物 - 半导体场效应晶体管,具有金属栅极/高k电介质堆叠和CMOS兼容的PDGE接触
机译:铟0.53镓0.47砷场效应晶体管的器件建模,分析和制造。
机译:使用自对准和激光干涉光刻技术制造的多栅极ZnO金属氧化物半导体场效应晶体管的性能增强
机译:In0.53Ga0.47As场效应晶体管中金属-绝缘体-半导体接触结构的超低源极/漏极电阻的实验演示
机译:在刚性和柔性基板上的自对准,极高频III-V金属氧化物半导体场效应晶体管。