机译:非晶NbO_x薄膜中双稳态内存和单稳态阈值电阻切换现象的共存
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Department of Physics, Chung-Ang University, Seoul 156-756, South Korea;
Research Institute for Solar and Sustainble Energies, Gwangju Institute of Science and Technology,Gwangju 500-712, Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
Department of Physics, Chung-Ang University, Seoul 156-756, South Korea;
Department of Physics, Chung-Ang University, Seoul 156-756, South Korea;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea Center for Integrated Nanotechnologies, MS K771, Los Alamos National Laboratory, Los Alamos,New Mexico 87545, USA;
Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701,South Korea;
机译:Nb2O5 / NbO_x薄膜中的局部离子辐射诱导的电阻阈值和存储器转换
机译:非晶TaO_2O_5薄膜中与上电极材料有关的双极存储和单极阈值电阻转换
机译:相变存储器的非晶Ga_5Ge_(15)Te_(80)硫族化物薄膜的转换现象
机译:厚非晶硫族化物膜中开关和记忆现象的热声研究
机译:在钒/五氧化二钒/钒薄膜结构中,阈值转换为电导量化状态。
机译:PEDOT PSS中的电阻性切换记忆现象:可切换二极管效应和一次写入多次读取记忆并存
机译:渗透模型解释单极性记忆和阈值 NiO薄膜中的电阻切换
机译:薄膜pmma聚合物中的记忆和阈值转换