Ferroelectric control of magnetic domains in ultra-thin cobalt layers

摘要

Non-volatile ferroelectric control of magnetic domains has been demonstrated in ultra-thin cobalt layers at room temperature. The sensitivity of magnetic anisotropy energy to the electronic structure in a few atomic layers adjacent to the interface allows for ferroelectric control of coercivity and magnetic domain dynamics. These effects have been monitored and quantified using magneto-optical Kerr effect. In particular, the regimes, where the ferroelectric domains enhance/inhibit the magnetic domain nucleation or increase/reduce domain wall velocity, have been explored. Thus, non-destructive and reversible ferroelectric domain writing provides a tool to define the magnetic domain paths, create nucleation sites, or control domain movement.