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首页> 外文期刊>Applied Physics Letters >Reduction of leakage current in ln_(0.53)Ga_(0.47)As channel metal-oxide-semiconductor field-effect-transistors using AIAs_(0.56)Sb_(0.44) confinement layers
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Reduction of leakage current in ln_(0.53)Ga_(0.47)As channel metal-oxide-semiconductor field-effect-transistors using AIAs_(0.56)Sb_(0.44) confinement layers

机译：使用AIAs_（0.56）Sb_（0.44）限制层减少ln_（0.53）Ga_（0.47）As沟道金属氧化物半导体场效应晶体管中的泄漏电流

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摘要

We compare the DC characteristics of planar ln_(0.53)Ga_(0.47)As channel MOSFETs using AIAs_(0.56)Sb_(0.44) barriers to similar MOSFETs using ln_(0.53)Ga_(0.47)As barriers. AIAs_(0.56)Sb_(0.44), with ~1.0eV conduction-band offset to ln_(0.53)Ga_(0.47)As, improves electron confinement within the channel. At gate lengths below 100nm and V_(DS) = 0.5V, the MOSFETs with AIAs_(0.56)Sb_(0.44) barriers show steeper subthreshold swing (SS) and reduced drain-source leakage current. We attribute the greater leakage observed with the ln_(0.53)Ga_(0.47)As barrier to thermionic emission from the N + Ino.53Gao.47As source over the ln_(0.53)Ga_(0.47)As/AIAs_(0.56)Sb_(0.44) heterointerface. A 56 nm gate length device with the AIAs_(0.56)Sb_(0.44) barrier exhibits 1.96 mS/μm peak transconductance and SS = 134mV/dec at V_(DS) = 0.5 V.
机译：我们比较了使用AIAs_（0.56）Sb_（0.44）势垒的平面ln_（0.53）Ga_（0.47）As沟道MOSFET的直流特性与使用ln_（0.53）Ga_（0.47）As势垒的类似MOSFET的直流特性。 AIAs_（0.56）Sb_（0.44）相对于ln_（0.53）Ga_（0.47）As具有约1.0eV的导带偏移，可改善沟道内的电子约束。在栅极长度低于100nm且V_（DS）= 0.5V时，具有AIAs_（0.56）Sb_（0.44）势垒的MOSFET表现出更陡峭的亚阈值摆幅（SS）和降低的漏源漏电流。我们将ln_（0.53）Ga_（0.47）As阻挡层中观察到的更大泄漏归因于N + Ino.53Gao.47As源上的ln_（0.53）Ga_（0.47）As / AIAs_（0.56）Sb_（0.44）热电子发射）异构接口。具有AIAs_（0.56）Sb_（0.44）势垒的56 nm栅长器件在V_（DS）= 0.5 V时表现出1.96 mS /μm的峰值跨导和SS = 134mV / dec。

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  • 来源
    《Applied Physics Letters》 |2013年第20期|203502.1-203502.4|共4页
  • 作者

    Cheng-Ying Huang; Sanghoon Lee; Doron Cohen-Elias; Jeremy J. M. Law; Andrew D. Carter; Varistha Chobpattana; Susanne Stemmer; Arthur C. Gossard; Mark J. W. Rodwell;

  • 作者单位

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA,Materials Department, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

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  • 入库时间 2022-08-18 03:16:44

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