Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO_2 nanobeams

摘要

Rapid thermal annealing of VO_2 nanobeams in an ambient argon environment has been carried out at various temperatures after device fabrication. Our analysis revealed that increasing the annealing temperature from 200 ℃ to 400 ℃ results in the reduction of both ohmic and nanobeam resistances with an appreciable decrease in joule-heating based transition voltage and transition temperature, while samples annealed at 500 ℃ exhibited a conducting rutile-phase like characteristics at room temperature. In addition, these variation trends were explored using a physical model and the results were found to be in agreement with the observed results, thus verifying the model.