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Evidence of enhanced electron-phonon coupling in ultrathin epitaxial copper films

机译:超薄外延铜膜中电子-声子耦合增强的证据

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摘要

Electron phonon (el-ph) coupling is a fundamental quantity that controls the electron transport through a conductor. We experimentally determined the el-ph coupling strength of epitaxial copper (Cu) films ranging from 5 to 1000 nm thick using both ultra-fast, optical pump-probe reflectivity and temperature-dependent resistivity measurements. An enhancement of the el-ph coupling strength was observed when the thickness of the films was reduced to below 50 nm. We suggest that this unexpected enhancement of the el-ph coupling strength is partially responsible for the observed increase of resistivity in the films below 50 nm thick.
机译:电子声子(el-ph)耦合是控制电子通过导体传输的基本量。我们使用超快,光学泵浦探针反射率和温度相关的电阻率测量值,通过实验确定了5至1000 nm厚的外延铜(Cu)薄膜的el-ph耦合强度。当膜的厚度减小到50nm以下时,观察到el-ph偶联强度的增强。我们认为,el-ph耦合强度的这种出乎意料的增强部分归因于所观察到的低于50 nm厚的薄膜的电阻率增加。

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  • 来源
    《Applied Physics Letters》 |2013年第19期|191602.1-191602.5|共5页
  • 作者单位

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

    Center for Integrated Electronics and Department of Physics, Applied Physics and Astronomy,Rensselaer Polytechnic Institute, Troy, New York 12180, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:16:42

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