Free-standing semipolar Ⅲ-nitride quantum well structures grown on chemical vapor deposited graphene layers

摘要

We report the synthesis and optical characterization of semipolar-oriented Ill-nitride quantum well (QW) structures obtained by growth on chemical vapor deposited graphene layers using metalorganic vapor phase epitaxy. Various multi-quantum well stacks of GaN(QW)/AlGaN(barrier) and InGaN (QW)/GaN (barrier) were grown. Growth on graphene not only helps achieve a semipolar orientation but also allows facile transfer of the QW multilayer stack to other cheap, flexible substrates. We demonstrate room-temperature photoluminescence from layers transferred to flexible Kapton films.