机译:通过12英寸规模的硅晶片工艺,Pt籽晶层的结构特性与基于Heusler的完整Co_2FeAl / MgO / Co_2Fe_6B_2结的垂直磁各向异性有关
MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791, South Korea,Samsung Electronics Co., Ltd., San #16 Banwol-dong, Hwasung-City, Gyeonggi-Do 445-701, South Korea;
MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791, South Korea;
MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791, South Korea;
Department of Physics, Hanyang University, Seoul 133-791, South Korea;
MRAM Center, Department of Electronics, Hanyang University, Seoul 133-791, South Korea;
机译:通过12英寸规模的硅晶片工艺,Pt籽晶层的结构特性与基于Heusler的Co2FeAl / MgO / Co2Fe6B2完全结的垂直磁各向异性相关
机译:MgO层和退火温度在MgO / Co_2FeAl / MgO堆中引起的强垂直磁各向异性
机译:反铁磁耦合强度对12英寸TiN电极上垂直磁隧道结中[Co / Pd]
机译:具有不同堆叠结构的垂直各向异性MgO的垂直各向异性MgO磁隧道交配中的隧道磁阻性能和退火稳定性
机译:CoFeB / MgO垂直磁隧道结的各向异性各向异性隧道关联:一种电子方法
机译:种子层对[Co / Ni]结构和磁性的影响 具有垂直磁各向异性的多层膜
机译:从固溶体中蒸发出ZrO2mgO复合复合薄膜的工艺参数相关光学和结构特性