Memory device application of wide-channel in-plane gate transistors with type-Ⅱ GaAsSb-capped InAs quantum dots

摘要

We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-Ⅱ GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-Ⅰ counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications.