机译:在GaN基发光二极管中使用表面等离子体激元耦合来切实缓解效率下降效应
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China;
Suzhou Institute of Nano-tech and Nano-bionics, CAS, Suzhou 215123, People's Republic of China State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China;
State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, People's Republic of China;
机译:研究表面等离激元与量子阱耦合以降低GaN基发光二极管的效率下降
机译:研究表面等离激元与量子阱耦合以降低GaN基发光二极管的效率下降
机译:通过表面等离激元耦合降低发光二极管的效率下降效应
机译:通过表面等离激元耦合降低发光二极管的效率下降效应
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
机译:通过局部表面等离子体增强了GaN基垂直发光二极管的外部量子效率