首页> 外文期刊>Applied Physics Letters >Formation behavior of Be_xZn_(1-x) O alloys grown by plasma-assisted molecular beam epitaxy
【24h】

Formation behavior of Be_xZn_(1-x) O alloys grown by plasma-assisted molecular beam epitaxy

机译:等离子体辅助分子束外延生长Be_xZn_(1-x)O合金的形成行为

获取原文
获取原文并翻译 | 示例
       

摘要

We report the phase formation behavior of Be_xZn_(1-x)O alloys grown by plasma-assisted molecular beam epitaxy. We find the alloy with low- and high-Be contents could be obtained by alloying BeO into ZnO films. X-ray diffraction measurements shows the c lattice constant value shrinks, and room temperature absorption shows the energy band-gap widens after Be incorporated. However, the alloy with intermediate Be composition are unstable and segregated into low- and high-Be contents BeZnO alloys. We demonstrate the phase segregation of Be_xZn_(1-x)O alloys with intermediate Be composition resulted from large internal strain induced by large lattice mismatch between BeO and ZnO.
机译:我们报告了由等离子体辅助分子束外延生长的Be_xZn_(1-x)O合金的相形成行为。我们发现可以通过将BeO合金到ZnO薄膜中来获得低和高Be含量的合金。 X射线衍射测量表明c晶格常数值缩小,而室温吸收表明掺入Be后能带隙变宽。然而,具有中等Be组成的合金是不稳定的,并且被隔离成低和高Be含量的BeZnO合金。我们证明了Be_xZn_(1-x)O合金的相偏析与中间Be组成是由于BeO和ZnO之间的大晶格失配引起的大内部应变所致。

著录项

  • 来源
    《Applied Physics Letters》 |2013年第20期|202103.1-202103.5|共5页
  • 作者单位

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China;

    Department of Physics and Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China;

    State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering,Sun Yat-sen University, Guangzhou 510275, China,Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:16:30

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号