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19μm quantum cascade infrared photodetectors

机译:19μm量子级联红外光电探测器

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摘要

Two InP based InGaAs/InAlAs photovoltaic quantum cascade detectors operating at peak wavelengths of 18 μm and 19 μm using different electronic transport mechanisms are reported. A longitudinal optical phonon extraction stair combined with energy mini-steps are employed for electron transport, which suppresses the leakage current and results in high device resistance. Altogether, this quantum design leads to 15 K peak responsivity of 2.34 mA/W and Johnson noise limited detectivity of 1 × 10~(11) Jones at 18 μm.
机译:报道了两个基于InP的InGaAs / InAlAs光伏量子级联检测器,它们使用不同的电子传输机制在18μm和19μm的峰值波长下工作。纵向光子提取阶梯结合能量小步长用于电子传输,从而抑制了泄漏电流并导致了较高的器件电阻。总而言之,这种量子设计导致在18μm处的15 K峰值响应率为2.34 mA / W,Johnson噪声限制的检测率为1×10〜(11)Jones。

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  • 来源
    《Applied Physics Letters》 |2013年第19期|191120.1-191120.4|共4页
  • 作者单位

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing 100083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;

    National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China;

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