High-performance low-temperature solution-processed InGaZnO thin-film transistors via ultraviolet-ozone photo-annealing

摘要

Ultraviolet (UV)-ozone photo-annealing was applied to fabricate low-temperature high-performance solution-processed thin-film transistors (TFTs). With UV-ozone treatment at the optimal temperature of 300 ℃, TFT devices showed an improved field-effect mobility of 1.73 cm~2 V~(-1) s~(-1), a subthreshold slope (S) of 0.32 V dec~(-1) an on/off-current ratio greater than 1.3 × 10~7, and good operational bias-stress stability compared to those of InGaZnO TFT devices fabricated with only a conventional thermal-annealing process. The results of X-ray photoelectron spectroscopy and the maximum density of the surface states (N_s) confirm that the device improvement originates from reduced oxygen-related defects and improved electron trapping due to UV-ozone irradiation.