Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap

摘要

The temperature dependence of energy gap-related emission from InNAsSb layers was studied by Fourier transform infrared photoluminescence (PL) spectroscopy. The shape of PL peak was analyzed using a theoretical expression, which takes into account both the localized and free carrier emission. Proper accounting for those two effects is very important for an accurate determination of the Varshni and Bose-Einstein parameters from PL data. It is shown that nitrogen incorporation has a very week effect on the temperature induced bandgap reduction in InNAsSb alloys and that the Varshni and Bose-Einstein parameters are very close to those observed in InAs and InSb.