机译:有效减少纳米棒模板上生长的(1120)非极性和(1122)半极性GaN中的缺陷
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD,United Kingdom;
Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD,United Kingdom;
机译:锥形r平面图案化蓝宝石衬底上的半极性(1122)和非极性(1120)GaN的相位控制
机译:在纳米棒模板上生长的(1122)半极性InGaN / GaN多量子阱的时空分辨光致发光研究
机译:在纳米棒模板上生长的(1122)半极性GaN的晶体质量得到改善
机译:激光在m面蓝宝石衬底上生长的半极性InGaN / GaN(1122)异质结构
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:在图案化(113)硅上生长的低缺陷大面积半极性(11 ...公式... 2)GaN
机译:在纳米棒模板上生长的(11(2)over-bar2)半极性InGaN / GaN多量子阱的时间和空间分辨光致发光研究