Stacked defect-free semi-polar and non-polar GaN grown on a foreign substrate by removing the nitrogen-

摘要

A method and structure for forming an epitaxial layer of a III-nitride material on a patterned foreign substrate having a low stacking defect density is described. Semi-polar and non-polar orientations of GaN essentially free of lamination defects can grow from the crystal-growth facets of the patterned substrate. If present, etching may be used to remove stacking faults. Crystal growth with impurities can remove crystal growth from the facet that is responsible for the formation of stacking faults and allow growth that is substantially lamination-free of the III-nitride material.