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机译:硫超饱和硅的深度分辨阴极发光光谱
IMEM-CNR Institute, viale Usberti 37/A, Parma, Italy,Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge,Massachusetts 02139, USA;
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge,Massachusetts 02139, USA;
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;
Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA;
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge,Massachusetts 02139, USA;
IMEM-CNR Institute, viale Usberti 37/A, Parma, Italy;
机译:软X射线发射光谱研究硫超饱和硅的电子结构
机译:使用深度分辨阴极发光光谱法评估抛光GaN衬底固有的表面下损伤
机译:深度解析阴极发光光谱研究闪速烧结ZnO中的本征点缺陷形成
机译:深度分辨阴极发光光谱作为氧化物中缺陷结构的探针
机译:使用依赖于深度的阴极发光光谱研究4H和6H碳化硅薄膜和肖特基二极管。
机译:氧化硅膜的阴极发光光谱应力分析及其损伤评价
机译:用硫过饱和的硅的深度分辨阴极发光光谱