Spin lifetime measurements in GaAsBi thin films

摘要

Photoluminescence spectroscopy and Hanle effect measurements are used to investigate carrier spin dephasing and recombination times in the semiconductor alloy GaAsBi as a function of temperature and excitation energy. Hanle effect measurements reveal the product of g-factor and effective spin dephasing time (gT_s) ranges from 0.8 ns at 40 K to 0.1 ns at 120K. The temperature dependence of gT_s provides evidence for a thermally activated effect, which is attributed to hole localization at single Bi or Bi cluster sites below 40 K.