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Long exciton lifetimes in stacking-fault-free wurtzite GaAs nanowires

机译:无堆叠无缺陷纤锌矿GaAs纳米线中的激子寿命长

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摘要

We present a combined photoluminescence and transmission electron microscopy study of single GaAs nanowires. Each wire was characterized both in microscopy and spectroscopy, allowing a direct correlation of the optical and the structural properties. By tuning the growth parameters, the nanowire crystal structure is optimized from a highly mixed zincblende-wurtzite structure to pure wurtzite. We find the latter one to be stacking-fault-free over nanowire lengths up to 4.1 μm. We observe the emission of purely wurtzite nanowires to occur only with polarization directions perpendicular to the wurtzite c-axis, as expected from the hexagonal unit cell symmetry. The free exciton recombination energy in the wurtzite structure is 1.518 eV at 5 K with a narrow linewidth of 4 meV. Most notably, these pure wurtzite nanowires display long carrier recombination lifetimes of up to 11.2 ns, exceeding reported lifetimes in bulk GaAs and state-of-the-art 2D GaAs/AlGaAs heterostructures.
机译:我们提出了单个GaAs纳米线的组合的光致发光和透射电子显微镜研究。每条线都在显微镜和光谱学中进行了表征,从而使光学和结构特性直接相关。通过调整生长参数,可以将纳米线晶体结构从高度混合的闪锌矿-纤锌矿结构优化为纯纤锌矿。我们发现,后者的纳米线长度可达4.1μm,无堆叠错误。我们观察到纯纤锌矿纳米线的发射仅在垂直于纤锌矿c轴的极化方向上发生,正如六角形晶胞对称性所预期的那样。纤锌矿结构中的自由激子复合能在5 K时为1.518 eV,窄线宽为4 meV。最值得注意的是,这些纯纤锌矿纳米线显示出​​高达11.2 ns的长载流子复合寿命,超过了报道的块状GaAs和最先进的2D GaAs / AlGaAs异质结构的寿命。

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  • 来源
    《Applied Physics Letters》 |2014年第22期|222109.1-222109.4|共4页
  • 作者单位

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

    Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg, D-93040 Regensburg, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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  • 入库时间 2022-08-18 03:16:08

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