机译:锗在多孔硅上的生长:缓冲液孔隙度对外延层晶体质量的影响
Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44122 Ferrara, Italy;
Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44122 Ferrara, Italy;
Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44122 Ferrara, Italy;
Department of Physics and Astronomy, University of Padova, Via Marzolo 8, 35131 Padova, Italy;
Sensor Laboratory, Department of Information Engineering CNR-INO, University of Brescia, via Valotti 9, 25123 Brescia, Italy;
Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44122 Ferrara, Italy;
CNR - IMM Institute for Microelectronics and Microsystems, Viale Gobetti 4, 40129 Bologna, Italy;
Department of Physics and Earth Sciences, University of Ferrara, Via Saragat, 1, 44122 Ferrara, Italy;
机译:锗在多孔硅上的生长:缓冲液孔隙度对外延层晶体质量的影响
机译:缓冲层厚度和外延层生长温度对MOCVD生长的InAs_(0.9)Sb_(0.1)晶体质量的影响
机译:不同孔隙率的多孔硅缓冲液对硅基TiO2纳米棒横向过生长的影响
机译:在SI上迈出III-V太阳能电池:通过低孔隙率多孔硅缓冲层和退火改善GE-SI虚拟基板的晶体质量
机译:使用梯度锗硅缓冲剂的太空光伏光伏用高品质硅砷化镓研究与开发。
机译:调整用于外延生长的高质量种子的多孔硅层的应变和表面粗糙度
机译:使用100nm Ge缓冲层在Si底物上生长的高质量GaAs倒置