Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon

摘要

As-grown InGaAs nanoneedle lasers, synthesized at complementary metal-oxide-semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.