机译:单轴压力诱导的PrO_(0.5)F_(0.5)BiS_2单晶的高T_c相
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
Center for Crystal Science and Technology, University of Yamanashi, Kofu 400-8511, Japan;
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan;
National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan,University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-0001, Japan;
机译:BiS_2基超导体PrO_(0.5)F_(0.5)BiS_2中单轴晶格收缩增强T_c
机译:La_(1-x)Sm_xO_(0.5)F_(0.5)BiS_2中的压力诱导相变
机译:高压合成法稳定BiS_2基超导体LaO_(0.5)F_(0.5)BiS_2的高Tc相
机译:基于BIS_2的分层LAO_(0.5)F_(0.5)BIS_2超导体的运输和磁性研究
机译:Mo0.5 W0.5S2单晶的生长和表征。
机译:外延单晶Co0.5(Mg0.55Zn0.45)0.5O1-v薄膜中的氧空位控制多个磁相
机译:单轴诱导prO0.5F0.5Bis2单晶的高Tc相 压力