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Computational prediction of two-dimensional group-Ⅳ mono-chalcogenides

机译:二维Ⅳ族单硫族元素化物的计算预测

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摘要

Density functional calculations determine the structure, stability, and electronic properties of two-dimensional materials in the family of group-Ⅳ monochalcogenides, MX (M = Ge, Sn, Pb; X = O, S, Se, Te). Calculations with a van der Waals functional show that the two-dimensional Ⅳ-Ⅵ compounds are most stable in either a highly distorted NaCl-type structure or a single-layer litharge type tetragonal structure. Their formation energies are comparable to single-layer MoS_2, indicating the ease of mechanical exfoliation from their layered bulk structures. The phonon spectra confirm their dynamical stability. Using the hybrid HSE06 functional, we find that these materials are semiconductors with bandgaps that are generally larger than for their bulk counterparts due to quantum confinement. The band edge alignments of monolayer group Ⅳ-Ⅵ materials reveal several type-Ⅰ and type-Ⅱ heterostructures, suited for optoelectronics and solar energy conversion.
机译:密度泛函计算确定了Ⅳ类单硫族化物MX(M = Ge,Sn,Pb; X = O,S,Se,Te)族中二维材料的结构,稳定性和电子性质。用范德华函数进行的计算表明,二维Ⅳ-Ⅵ型化合物在高度变形的NaCl型结构或单层利特格型四方结构中最稳定。它们的形成能与单层MoS_2相当,表明从其分层的本体结构中容易发生机械剥离。声子光谱证实了它们的动力学稳定性。使用混合HSE06功能,我们发现由于量子限制,这些材料是带隙通常比其体隙大的半导体。单层Ⅳ-Ⅵ族材料的能带边缘排列揭示了几种Ⅰ型和Ⅱ型异质结构,适用于光电子和太阳能的转换。

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  • 来源
    《Applied Physics Letters》 |2014年第4期|042103.1-042103.4|共4页
  • 作者单位

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA;

    Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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