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Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

机译:非极性m平面AlGaN / GaN量子阱中的太赫兹子带间吸收

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摘要

We demonstrate THz intersubband absorption (15.6-26.1 meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14 meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a~40% reduction in the linewidth (from roughly 8 to 5 meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.
机译:我们展示了m平面AlGaN / GaN量子阱中的THz子带间吸收(15.6-26.1 meV)。我们发现,随着理论阱宽度的增加,峰值能量随着量子阱宽度的增加而减小的趋势。然而,相对于计算值,观察到跃迁能量高达14 meV的蓝移。该蓝移显示为随着电荷密度的降低而降低,因此归因于多体效应。此外,通过降低总片材密度并在势垒中插入可将波函数与电离杂质分开的未掺杂AlGaN层,可将线宽减小约40%(从大约8 meV降低至5 meV)。

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  • 来源
    《Applied Physics Letters》 |2014年第2期|021109.1-021109.4|共4页
  • 作者单位

    Physics Department, Purdue University, West Lafayette, Indiana 47907, USA;

    Physics Department, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA;

    Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA;

    Physics Department, Purdue University, West Lafayette, Indiana 47907, USA,Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA,School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA;

    Physics Department, Purdue University, West Lafayette, Indiana 47907, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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