机译:脉冲激光沉积铁磁掺Nd In_2O_3薄膜中的正磁阻
School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia;
School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia;
School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, United States;
Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia;
School of Materials Science and Engineering, The University of New South Wales, Sydney, New South Wales 2052, Australia;
机译:脉冲激光沉积生长的铁磁Cr_xTi_(1-x)N固溶氮化物薄膜及其磁阻
机译:脉冲激光沉积生长Ti掺杂In_2O_3薄膜的光电性能
机译:脉冲激光沉积生长的铁磁半导体Ti_(1-x)Co_xO_(2-δ):Sb薄膜的铁磁和电性能
机译:TA的结构和光致发光性能:脉冲激光沉积技术生长的in_2O_3薄膜
机译:研究NbNx薄膜和通过脉冲激光沉积和热扩散生长的纳米粒子。
机译:衬底温度和氧分压对脉冲激光沉积生长纳米晶铜氧化物薄膜性能的影响
机译:脉冲激光沉积法制备的铁磁掺杂Nd的In2O3薄膜中的正磁阻