机译:γ射线总电离剂量对HfOx电阻随机存取存储器的开关特性和灯丝稳定性的影响
School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281, USA,School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
School of Computing, Informatics, and Decision Systems Engineering, Arizona State University, Tempe, Arizona 85281, USA,School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA;
机译:Ta / HfOx灯丝型电阻型随机存取存储器在双层结构中反应性金属层对电阻转换的依赖性
机译:膜厚和Ar / O2比率对基于HfOx的电阻切换随机存取存储器的电阻切换特性的影响
机译:具有BN插入层的低功率基于HfOx的电阻型随机存取存储器的电阻切换特性和均匀性
机译:f金属层对基于HfOX的电阻式随机存取存储器开关特性的影响
机译:总剂量辐射对CMOS 1M位动态随机存取存储器的影响。
机译:通过电检测磁共振研究TiN / Ti / HfO2 / TiN电阻性随机存取存储器的总电离剂量效应
机译:TiN / HfOx / TiN电阻随机存取存储器的总剂量硬度
机译:商业电阻随机存取记忆的辐射效应。