Total dose hardness of TiN/HfOx/TiN resistive random access memory

摘要

Resistive random access memory based on TiN/HfOx/TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after 60Co gamma irradiation. Monoclinic HfOx deposited at 400°C did not result in resistive switching. Deposition at 300°C and 350°C resulted in cubic HfOx which switched successfully. Both stoichiometric HfO2 and sub-oxides HfO2-x result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.