Resonant intersubband plasmon induced current in InGaAs quantum wells on GaAs

摘要

We present measurements of the current enhancement due to the coupling of two intersubband plasmons in In_(0.05)Ga_(0.95)As quantum wells. With changing bias, an emissive and an absorptive intersubband plasmon mode cross attractively and trapped electrons in the ground state gain enough energy from the plasma wave to be lifted up to the second subband, where they can contribute to the current. This effect can be directly observed as an increase of 33% in the current. A magnetic field applied parallel to the growth direction allows a control of the strength of the intersubband plasmon coupling up to a quenching.