Random telegraph noise analysis in AlO_x/WO_y resistive switching memories

摘要

In this Letter, the origins of current fluctuations of Al/Al_O_x/WO_y/W bilayer resistive random access memory (RRAM) devices are investigated through detailed noise analysis. Random telegraph noise (RTN) measurements were performed on RRAMs with three different resistance states. An obvious RTN signal with 40.7% amplitude difference was found at high resistance state, and the trapping/de-trapping process leading to the RTN signal was studied in detail by extracting the trap energy from energy diagram. For median and low resistance states, the resistance fluctuations were 34.0% and 0.3%, respectively. To further study the RTN characteristics, the normalized power spectral density (PSD) was analyzed. It is found that, for one dominant-trap caused RTN phenomena, the normalized noise PSD behaves as I/f~2 on the high resistance state; while for median and low resistance states, the noise follows I/f rule, suggesting that the current fluctuations are associated with the envelop of multiple RTNs caused by traps located near/in the conductive filament. Based on the noise analyses in time and frequency domains, a conduction mechanism is proposed to describe the trap effects on the current fluctuations of different resistance states.