Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

摘要

Thermal conductivity of freestanding 10nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m~(-1) K~(-1), is lower than the bulk basal plane value (390 W m~(-1) K~(-1)) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.