机译:多层WSe_2场效应晶体管中电子和空穴载流子的电流波动
School of Electrical Engineering, Korea University, Seoul 02481, South Korea;
School of Electrical Engineering, Korea University, Seoul 02481, South Korea;
Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea;
School of Electrical Engineering, Korea University, Seoul 02481, South Korea;
School of Electrical Engineering, Korea University, Seoul 02481, South Korea;
School of Electrical Engineering, Korea University, Seoul 02481, South Korea,IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble, France;
Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea;
School of Electrical Engineering, Korea University, Seoul 02481, South Korea;
机译:APS -APS 2017年3月会议-活动-场效应晶体管中纳米结构表面控制的电子和空穴载流子注入
机译:空气稳定的场效应晶体管中具有Au电极的电子和空穴的等效双极性载流子注入
机译:多层WSE_2晶体管的光电性能通过缺陷工程增强
机译:多层WSE_2场效应晶体管的低频降噪
机译:利用电子温度波动对反向磁场夹点中的平衡磁分布,电流传输和内部结构进行诊断。
机译:从电子到溶液处理的有机混合场效应晶体管切换到空穴传输
机译:电子和空穴传导的厚度趋势和表面电荷转移掺杂2D场效应晶体管的厚度趋势