Thermal management in MoS_2 based integrated device using near-field radiation

摘要

Recently, wafer-scale growth of monolayer MoS_2 films with spatial homogeneity is realized on SiO_2 substrate. Together with the latest reported high mobility, MoS_2 based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS_2, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS_2 to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS_2 and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS_2 sheet. Therefore, an efficient thermal management strategy for MoS_2 integrated device is proposed: Graphene sheet is brought into close proximity, 10-20 nm from MoS_2 device; heat energy transfer from MoS_2 to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.