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Junction size dependence of ferroelectric properties in e-beam patterned BaTiO_3 ferroelectric tunnel junctions

机译:电子束构图的BaTiO_3铁电隧道结中铁电性能的结尺寸依赖性

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摘要

We investigate the switching characteristics in BaTiO_3-based ferroelectric tunnel junctions patterned in a capacitive geometry with circular Ru top electrode with diameters ranging from ~430 to 2300 nm. Two different patterning schemes, viz., lift-off and ion-milling, have been employed to examine the variations in the ferroelectric polarization, switching, and tunnel electro-resistance resulting from differences in the pattering processes. The values of polarization switching field are measured and compared for junctions of different diameter in the samples fabricated using both patterning schemes. We do not find any specific dependence of polarization switching bias on the size of junctions in both sample stacks. The junctions in the ion-milled sample show up to three orders of resistance change by polarization switching and the polarization retention is found to improve with increasing junction diameter. However, similar switching is absent in the lift-off sample, highlighting the effect of patterning scheme on the polarization retention.
机译:我们研究了在直径为〜430至2300 nm的圆形Ru顶部电极的电容性几何结构中基于BaTiO_3的铁电隧道结的开关特性。已经采用了两种不同的构图方案,即剥离法和离子铣削法,来检查由构图过程中的差异导致的铁电极化,开关和隧道电阻的变化。测量并比较了使用两种构图方案制作的样品中不同直径结的偏振转换场的值。我们在两个样本堆栈中都没有发现极化切换偏置对结点大小的任何特定依赖性。离子磨样品中的结点通过极化切换显示出多达三个数量级的电阻变化,并且发现极化保留随着结点直径的增加而提高。然而,在剥离样品中不存在类似的切换,突出了图案化方案对偏振保持率的影响。

著录项

  • 来源
    《Applied Physics Letters》 |2015年第12期|122903.1-122903.5|共5页
  • 作者单位

    Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487, USA;

    Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487, USA ,Walther-Meissner-Institut, Bayerische Akdademie der Wissenschaften, Garching 85748, Germany;

    Thin Films and Physics of Nanostructures, Department of Physics and Center for Spinelectronic Materials and Devices, Bielefeld University, Bielefeld 33615, Germany;

    Thin Films and Physics of Nanostructures, Department of Physics and Center for Spinelectronic Materials and Devices, Bielefeld University, Bielefeld 33615, Germany;

    Center for Materials for Information Technology, The University of Alabama, Tuscaloosa, Alabama 35487, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:15:19

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