机译:原位高温透射电子显微镜辅助的InAlN高电子迁移率晶体管Ti / Al / Ni / Au欧姆接触优化
Tyndall National Institute, University College Cork, Lee Makings, Dyke Parade, Cork T12 R5CP, Ireland,School of Engineering, University College Cork, Cork T12 YN60, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Dyke Parade, Cork T12 R5CP, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Dyke Parade, Cork T12 R5CP, Ireland,Department of Chemistry, University College Cork, Cork T12 YN60, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Dyke Parade, Cork T12 R5CP, Ireland,Department of Chemistry, University College Cork, Cork T12 YN60, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Dyke Parade, Cork T12 R5CP, Ireland,School of Engineering, University College Cork, Cork T12 YN60, Ireland;
机译:利用Ti / Al / Ni / Au欧姆接触的AlGaN / GaN高电子迁移率晶体管中的纳米裂纹形成
机译:透射电子显微镜评估Ti / Al / Ni / Au欧姆接触对未掺杂AlGaN / GaN异质结构的硅增强作用
机译:Ti / Al / Ni / Au欧姆接触AlGaN / GaN高电子迁移率晶体管的表面粗糙度分析
机译:具有Ti / Al / W欧姆金属结构的无金GaN高电子迁移率晶体管
机译:晶格匹配的氮化铟铝高电子迁移率晶体管,带有MBE重生欧姆接触
机译:具有再生欧姆接触的半绝缘Ammono-GaN衬底上的AlGaN / GaN高电子迁移率晶体管
机译:PD / GE / TI / AU欧姆接触与未掺杂帽层的孔欧姆接触的微观结构和电气研究