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Ohmic contacts for high electron mobility transistors and a method of making the same
Ohmic contacts for high electron mobility transistors and a method of making the same
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机译:用于高电子迁移率晶体管的欧姆接触及其制造方法
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摘要
A process and related product in which ohmic contacts are formed in High Electron Mobility Transistors (HEMTs) employing compound substrates such as gallium nitride. An improved device and an improvement to a process for fabrication of ohmic contacts to GaN/AlGaN HEMTs using a novel two step resist process to fabricate the ohmic contacts are described. This novel two-step process consists of depositing a plurality of layers having compounds of Group III V elements on a substrate; patterning and depositing a first photoresist on one of the layers; etching recessed areas into this layer; depositing ohmic metals on the recessed areas; removing the first photoresist; patterning and depositing a second photoresist, smaller in profile than the first photoresist, on the layer; depositing more ohmic metal on the layer allowing for complete coverage of the recessed areas; removing the second photoresist, and annealing the semiconductor structure.
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