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Low-cost copper complexes as p-dopants in solution processable hole transport layers

机译:低成本铜络合物作为可溶液加工的空穴传输层中的p型掺杂剂

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摘要

We demonstrate the usage of the Lewis-acidic copper(Ⅱ)hexafluoroacetylacetonate (Cu(hfac)_2) and copper(Ⅱ)trifluoroacetylacetonate (Cu(tfac)_2) as low-cost p-dopants for conductivity enhancement of solution processable hole transport layers based on small molecules in organic light emitting diodes (OLEDs). The materials were clearly soluble in mixtures of environmentally friendly ani-sole and xylene and spin-coated under ambient atmosphere. Enhancements of two and four orders of magnitude, reaching 4.0 × 10~(-11) S/cm with a dopant concentration of only 2 mol% Cu(hfac)_2 and 1.5 × 10~(-9) S/cm with 5 mol% Cu(tfac)_2 in 2,2',7,7'-tetra(N,N-ditolyl)amino-9,9-spiro-bifluor-ene (spiro-TTB), respectively, were achieved. Red light emitting diodes were fabricated with reduced driving voltages and enhanced current and power efficiencies (8.6 lm/W with Cu(hfac)_2 and 5.6 lm/W with Cu(tfac)_2) compared to the OLED with undoped spiro-TTB (3.9 lm/W). The OLED with Cu(hfac)_2 doped spiro-TTB showed an over 8 times improved LT_(50) lifetime of 70 h at a starting luminance of 5000 cd/m~2. The LT_(50) lifetime of the reference OLED with PEDOT:PSS was only 8 h. Both non-optimized OLEDs were operated at similar driving voltage and power efficiency.
机译:我们证明了路易斯酸性铜(Ⅱ)六氟乙酰丙酮化铜(Cu(hfac)_2)和铜(Ⅱ)三氟乙酰丙酮化铜(Cu(tfac)_2)作为低成本p型掺杂剂用于提高溶液可加工空穴传输层电导率的用途基于有机发光二极管(OLED)中的小分子。该材料明显溶于环境友好的苯甲醚和二甲苯的混合物中,并在环境气氛下旋涂。两个和四个数量级的增强,掺杂剂浓度仅为2 mol%Cu(hfac)_2时达到4.0×10〜(-11)S / cm,5 mol时达到1.5×10〜(-9)S / cm获得了分别在2,2',7,7'-四(N,N-二糖基)氨基-9,9-螺-二芴(spiro-TTB)中的%Cu(tfac)_2。与未掺杂螺环-TTB的OLED(3.9)相比,制造的红色发光二极管具有更低的驱动电压和更高的电流及功率效率(Cu(hfac)_2为8.6 lm / W,Cu(tfac)_2为5.6 lm / W)。 lm / W)。掺杂Cu(hfac)_2的螺-TTB的OLED在5000 cd / m〜2的起始亮度下,其LT_(50)寿命为70 h的使用寿命提高了8倍以上。具有PEDOT:PSS的参考OLED的LT_(50)寿命仅为8 h。两种未优化的OLED均以相似的驱动电压和功率效率运行。

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  • 来源
    《Applied Physics Letters》 |2015年第10期|103305.1-103305.4|共4页
  • 作者单位

    Department for Materials Science and Engineering, Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058, Germany ,Siemens AG - Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058, Germany;

    Siemens AG - Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058, Germany;

    Siemens AG - Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058, Germany;

    Siemens AG - Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058, Germany;

    Department for Materials Science and Engineering, Materials for Electronics and Energy Technology, Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen 91058, Germany;

    Siemens AG - Corporate Technology, Guenther-Scharowsky-Str. 1, Erlangen 91058, Germany;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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