Effects of electron interference on temperature dependent transport properties of two dimensional electron gas at MgZnO/ZnO interfaces

摘要

We report the effects of electron interference on temperature dependent transport properties of two dimensional electron gas (2DEG) confined at the interface in polycrystalline MgZnO/ZnO heterostructures grown by pulsed laser deposition on c-alumina substrates. On increasing Mg concentration in the MgZnO layer, the sheet electron concentration was found to increase and the sheet resistance was found to decrease. In addition, the electron concentration and mobility were almost temperature independent in the range from 4.2 to 300 K, indicating the formation of 2DEG at the interface. The temperature dependent resistivity measurements showed a negative temperature coefficient of resistivity at low temperatures together with negative magnetoresistance. These were found to be caused by electron interference effects, and the experimental data could be explained using the models of quantum corrections to conductivity.