机译:2 MeV质子辐照的AlGaN / GaN HEMT的降解机理
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
University of California at Berkeley, Berkeley, California 94720, USA;
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
ERC, Research Center Juelich GmbH, 52425 Juelich, Germany;
University of California at Berkeley, Berkeley, California 94720, USA;
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
Naval Postgraduate School, Monterey, California 93943, USA;
U.S. Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, DC 20375, USA;
机译:5 MeV质子辐照的常关p-AlGaN栅极AlGaN / GaN HEMT的降解特性
机译:800 MeV Bi离子辐照下AlGaN / GaN HEMT的降解机理
机译:质子辐照的AlGaN / AlN / GaN HEMT中负责器件降解的静电机制
机译:2MeV质子辐照的AlGaN / GaN HEMT中的失效机理
机译:分析影响ALGaN / GaN HEMT安全运行的故障机理。
机译:质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
机译:2 MeV质子辐照的AlGaN / GaN HEMT的降解机理