机译:铁磁性接触几层磷的肖特基势垒高度的确定
Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, USA;
Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, USA;
School of Physics and Astronomy, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, USA;
Department of Electrical and Computer Engineering, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, USA;
机译:介电上限对少量磷光晶体管的影响:调整肖特基势垒高度
机译:单层MOS2场效应晶体管,具有低肖特基势垒高度,具有铁磁金属触点
机译:脉冲激光沉积生长异质外延β-Ga_2O_3薄膜上Cu肖特基接触的均值和均匀势垒高度的确定
机译:低接触电阻率的锗+接触,磷/锑共掺杂并降低肖特基势垒高度
机译:介电偶极子减轻了肖特基势垒高度调整,从而降低了接触电阻。
机译:金属-半导体接触的重要性肖特基势垒晶体管的研究:几层黑色的案例研究磷?
机译:介质盖层对少数层磷光体晶体管的影响:调整肖特基势垒高度
机译:热激发和量子力学传输对光电阈值确定肖特基势垒高度的影响。