Low-frequency noise in MoSe_2 field effect transistors

摘要

One of the important performance metrics of emerging nanoelectronic devices, including low dimensional Field Effect Transistors (FETs), is the magnitude of the low-frequency noise. Atomically thin 2D semiconductor channel materials such as MoX_2 (X = S, Se) have shown promising transistor characteristics such as I_(ON)/I_(OFF) ratio exceeding 10~6 and low I_(OFF), making them attractive as channel materials for next generation nanoelectronic devices. However, MoS_2 FETs demonstrated to date exhibit high noise levels under ambient conditions. In this letter, we report at least two orders of magnitude smaller values of Hooge parameter in a back-gated MoSe_2 FET (10 atomic layers) with nickel S/D contacts and measured at atmospheric pressure and temperature. The channel dominated regime of noise was extracted from the total noise spectrum and is shown to follow a mobility fluctuation model with l/f dependence. The low noise in MoSe_2 FETs is comparable to other 1D nanoelectronic devices such as carbon nanotube FETs (CNT-FETs) and paves the way for use in future applications in precision sensing and communications.