机译:利用等电子阱增强导通电流的硅基隧道场效应晶体管中隧道传输的研究
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST) Central 4,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;
机译:硅基隧道场效应晶体管中热注入对利用等离子陷阱增强导通电流的影响
机译:陷阱辅助隧穿对双栅隧道场效应晶体管中陷阱辅助隧穿电流的影响
机译:基于所有隧穿传输的Pi-gate隧穿场效应晶体管电荷捕获非易失性存储器
机译:利用等电阱增强带间隧穿电流及其在TFET中的应用
机译:III-V Esaki二极管和2D隧穿场效应晶体管的量子模拟研究
机译:双门等腰梯形隧道场效应晶体管(DGIT-TFET)的设计优化
机译:界面陷阱和氧化物电荷对隧穿场效应晶体管漏电流的影响
机译:观察负责GaN金属半导体场效应晶体管电流崩塌的深陷阱;杂志文章