首页> 外文期刊>Applied Physics Letters >Geometric tuning of charge and spin correlations in manganite superlattices
【24h】

Geometric tuning of charge and spin correlations in manganite superlattices

机译:锰超晶格中电荷和自旋相关性的几何调整

获取原文
获取原文并翻译 | 示例
       

摘要

We report a modulation of the in-plane magnetotransport in artificial manganite superlattice [(NdMnO_3)_n/(SrMnO_3)_n/(LaMnO_3)_n]_m by varying the layer thickness n while keeping the total thickness of the structure constant. Charge transport in these heterostructures is confined to the interfaces and occurs via variable range hopping. Upon increasing n, the interfacial separation rises, leading to a suppression of the electrostatic screening between carriers of neighboring interfaces and the opening of a Coulomb gap at the Fermi level (E_F). The high-field magnetoresistance (MR) is universally negative due to progressive spin alignment. However, at a critical thickness of n = 5 unit cells (u.c), an exchange field coupling between ferromagnetically ordered interfaces results in positive MR at low magnetic field (H). Our results demonstrate the ability to geometrically tune the electrical transport between regimes dominated by either charge or spin correlations.
机译:我们报告了通过改变层厚度n,同时保持结构的总厚度不变,对人造锰超晶格[(NdMnO_3)_n /(SrMnO_3)_n /(LaMnO_3)_n] _m中面内磁传输的调制。这些异质结构中的电荷传输仅限于界面,并通过可变范围跳变发生。随着n的增加,界面间距增加,从而导致相邻界面的载流子之间的静电屏蔽受到抑制,并且在费米能级(E_F)处产生了库仑间隙。由于渐进式自旋对准,高场磁阻(MR)通常为负。但是,在n = 5个单位晶胞(u.c)的临界厚度下,铁磁有序界面之间的交换场耦合会在低磁场(H)下产生正MR。我们的结果证明了在几何上调节由电荷或自旋相关性主导的机制之间的电输运的能力。

著录项

  • 来源
    《Applied Physics Letters》 |2015年第2期|023120.1-023120.5|共5页
  • 作者单位

    Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Vassilika Vouton, Heraklion 71110, Greece,CNRS, Institut Neel, B.P. 166, 38042 Grenoble Cedex 09, France;

    Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Vassilika Vouton, Heraklion 71110, Greece,Cretan Center for Quantum Complexity and Nanotechnology, University of Crete, Heraklion 71003, Greece;

    Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea;

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, South Korea;

    Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, Vassilika Vouton, Heraklion 71110, Greece,Cretan Center for Quantum Complexity and Nanotechnology, University of Crete, Heraklion 71003, Greece,Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371,Department of Physics, University of Crete, Heraklion 71003, Greece;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:15:03

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号