机译:通过在由InGaAs沟道和N极GaN漏极组成的晶圆结合电流孔径垂直电子晶体管中实施InGaN中间层来减少势垒
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
机译:InGaAs-InGaN晶片键合电流孔径垂直电子晶体管(BAVET)
机译:InGaAs-InGaN晶片键合电流孔径垂直电子晶体管(BAVET)
机译:栅孔重叠对基于InGaAs / InGaN的键合孔垂直电子晶体管中通道夹缩的影响
机译:具有In
机译:III-As / N极性III-N晶片键合异质结及其在电流孔径垂直电子晶体管中的实现
机译:AlGaN / GaN高电子迁移率晶体管中的电流崩塌是否可能源于沟道电子的能量弛豫?
机译:AlGaN / GaN电流孔径垂直电子晶体管,重生频道
机译:电流孔径垂直电子晶体管(CaVET)。