Stimulated emission via electron-hole plasma recombination in fully strained single InGaN/GaN heterostructures

摘要

The optical properties of fully coherently grown single InGaN/GaN heterostructures for 12 ＜ In% ＜ 17 were investigated under low and high density excitations. At lower density, S-shape temperature dependence of the main emission peak, associated with localized exciton recombination was observed. The activation energy of the localized excitons remains invariable in the given range of In-contents. Most interestingly, under high density pulse-excitations, stimulated emission by electron-hole plasma recombination was observed for temperatures up to 295 K.